PART |
Description |
Maker |
IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation] ETC[ETC]
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IRFP244 IRFP245 IRFP246 IRFP247 |
15A and 14A 275V and 250V 0.28 and 0.34 Ohm N-Channel Power MOSFETs (IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
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IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS[IXYS Corporation]
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MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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MOTOROLA[Motorola, Inc]
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IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET) HiPerFET Power MOSFETs Single Die MOSFET
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IXYS Corporation
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FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
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INTERSIL[Intersil Corporation] Intersil, Corp.
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R |
PATCH PANEL HINGE KIT 4U SCA-H Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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INTERSIL[Intersil Corporation] Intersil, Corp.
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FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆,拉德硬,SEGR耐,N沟道功率MOSFET 3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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Intersil, Corp. INTERSIL[Intersil Corporation] http://
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IXFNB24N100 IXFNB24N100F IXFN24N100 IXFN24N100F |
HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET HiPerRF Power MOSFETs F-Class: MegaHertz Switching
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IXYS, Corp. IXYS Corporation
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